Near-field cathodoluminescence studies on n-doped gallium nitride films
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چکیده
منابع مشابه
Cathodoluminescence efficiency dependence on excitation density in n-type gallium nitride.
Cathodoluminescence (CL) spectra from silicon doped and undoped wurtzite n-type GaN have been measured in a SEM under a wide range of electron beam excitation conditions, which include accelerating voltage, beam current, magnification, beam diameter, and specimen temperature. The CL intensity dependence on excitation density was analyzed using a power-law model (I CL proportional, variant J m )...
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